NXP Semiconductors Stereo Amplifier SA58670A User Manual

SA58670A  
2.1 W/channel stereo class-D audio amplifier  
Rev. 02 — 23 October 2008  
Product data sheet  
1. General description  
The SA58670A is a stereo, filter-free class-D audio amplifier which is available in an  
HVQFN20 package with the exposed Die Attach Paddle (DAP).  
The SA58670A features independent shutdown controls for each channel. The gain may  
be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity  
to noise and RF rectification is increased by high PSRR and differential circuit topology.  
Fast start-up time and small package makes it an ideal choice for both cellular handsets  
and PDAs.  
The SA58670A delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 . It  
delivers 2.1 W/channel at 5.0 V into 4 . The maximum power efficiency is excellent at  
70 % to 74 % into 4 and 84 % to 88 % into 8 . The SA58670A provides thermal and  
short-circuit shutdown protection.  
2. Features  
I Output power:  
N 2.1 W/channel into 4 at 5.0 V  
N 1.4 W/channel into 8 at 5.0 V  
N 720 mW/channel into 8 at 3.6 V  
I Supply voltage: 2.5 V to 5.5 V  
I Independent shutdown control for each channel  
I Selectable gain: 6 dB, 12 dB, 18 dB and 24 dB  
I High SVRR: 77 dB at 217 Hz  
I Fast start-up time: 3.5 ms  
I Low supply current  
I Low shutdown current  
I Short-circuit and thermal protection  
I Space savings with 4 mm × 4 mm HVQFN20 package  
I Low junction to ambient thermal resistance of 24 K/W with exposed DAP  
3. Applications  
I Wireless and cellular handset and PDA  
I Portable DVD player  
I USB speaker  
I Notebook PC  
I Portable radio and gaming  
 
     
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
6. Pinning information  
6.1 Pinning  
terminal 1  
index area  
1
2
3
4
5
15  
14  
13  
12  
11  
G1  
OUTLP  
PVDD  
G0  
OUTRP  
PVDD  
PGND  
OUTRN  
SA58670ABS  
PGND  
OUTLN  
(1)  
DAP  
002aad664  
Transparent top view  
(1) Exposed Die Attach Paddle (DAP).  
Fig 2. Pin configuration for HVQFN20  
6.2 Pin description  
Table 2.  
Symbol  
Pin description  
Pin  
Description  
G1  
1
gain select input 1  
left channel positive output  
OUTLP  
PVDD  
PGND  
OUTLN  
n.c.  
2
3
power supply voltage (level same as AVDD)  
power ground  
4
5
left channel negative output  
not connected  
6
SDL  
7
left channel shutdown input (active LOW)  
right channel shutdown input (active LOW)  
analog supply voltage (level same as PVDD)  
not connected  
SDR  
8
AVDD  
n.c.  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
OUTRN  
PGND  
PVDD  
OUTRP  
G0  
right channel negative output  
power ground  
power supply voltage (level same as AVDD)  
right channel positive output  
gain select input 0  
INRP  
INRN  
AGND  
right channel positive input  
right channel negative input  
analog ground  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
3 of 24  
 
     
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
Table 2.  
Pin description …continued  
Symbol  
INLN  
INLP  
-
Pin  
19  
Description  
left channel negative input  
20  
left channel positive input  
(DAP)  
exposed die attach paddle; connect to ground plane heat spreader  
7. Limiting values  
Table 3.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]  
Symbol Parameter  
Conditions  
Min  
Max  
Unit  
V
VDD  
supply voltage  
Active mode  
Shutdown mode  
pin SDL  
0.3  
0.3  
GND  
GND  
0.3  
+6.0  
+7.0  
V
VI  
input voltage  
VDD  
V
pin SDR  
VDD  
V
other pins  
VDD + 0.3  
V
P
power dissipation  
derating factor 41.6 mW/K  
Tamb = 25 °C  
Tamb = 75 °C  
Tamb = 85 °C  
operating in free air  
operating  
-
5.2  
3.12  
2.7  
+85  
+150  
+85  
-
W
W
W
°C  
°C  
°C  
V
-
-
Tamb  
Tj  
ambient temperature  
junction temperature  
storage temperature  
40  
40  
65  
±2000  
±200  
Tstg  
Vesd  
electrostatic discharge human body model  
voltage  
machine model  
-
V
[1] VDD is the supply voltage on pins PVDD and pin AVDD.  
GND is the voltage ground on pins PGND and pin AGND.  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
4 of 24  
 
     
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
8. Static characteristics  
Table 4.  
Static characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
-
Max  
5.5  
6
Unit  
V
VDD  
IDD  
supply voltage  
supply current  
operating  
2.5  
VDD = 2.5 V; no load  
VDD = 3.6 V; no load  
VDD = 5.5 V; no load  
no input signal;  
-
-
-
-
4
mA  
mA  
mA  
nA  
5
7.5  
9
6
IDD(sd)  
shutdown mode supply current  
10  
1000  
VSDR = VSDL = GND  
PSRR  
Vi(cm)  
power supply rejection ratio  
common-mode input voltage  
common mode rejection ratio  
VDD = 2.5 V to 5.5 V  
-
75  
-
55  
dB  
V
0.5  
-
VDD 0.8  
50  
CMRR  
inputs are shorted together;  
VDD = 2.5 V to 5.5 V  
69  
dB  
VIH  
VIL  
HIGH-level input voltage  
LOW-level input voltage  
VDD = 2.5 V to 5.5 V;  
pins SDL, SDR, G0, G1  
1.3  
0
-
-
VDD  
V
V
VDD = 2.5 V to 5.5 V;  
0.35  
pins SDL, SDR, G0, G1  
IIH  
HIGH-level input current  
LOW-level input current  
switching frequency  
VDD = 5.5 V; VI = VDD  
VDD = 5.5 V; VI = 0 V  
VDD = 2.5 V to 5.5 V  
VG0 = VG1 = 0.35 V  
VG0 = VDD; VG1 = 0.35 V  
VG0 = 0.35 V; VG1 = VDD  
VG0 = VG1 = VDD  
-
-
50  
µA  
µA  
kHz  
dB  
dB  
dB  
dB  
IIL  
-
-
5
fsw  
250  
5.5  
11.5  
17.5  
23.5  
300  
6
350  
6.5  
12.5  
18.5  
24.5  
Gv(cl)  
closed-loop voltage gain  
12  
18  
24  
Pins OUTLP, OUTLN, OUTRP and OUTRN  
RDSon  
drain-source on-state resistance  
VDD = 2.5 V  
VDD = 3.6 V  
VDD = 5.5 V  
-
-
-
-
700  
570  
500  
5
-
mΩ  
mΩ  
mΩ  
mV  
-
-
|VO(offset)  
|
output offset voltage  
measured differentially; inputs  
AC grounded; Gv(cl) = 6 dB;  
10  
VDD = 2.5 V to 5.5 V  
Zo(sd)  
shutdown mode output impedance VSDR = VSDL = 0.35 V  
-
2
-
kΩ  
[1] VDD is the supply voltage on pins PVDD and pin AVDD.  
GND is the ground supply voltage on pins PGND and pin AGND.  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
5 of 24  
 
     
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
9. Dynamic characteristics  
Table 5.  
Dynamic characteristics  
Tamb = 25 °C; RL = 8 ; unless otherwise specified[1].  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Po  
output power  
per channel; f = 1 kHz; THD+N = 10 %  
RL = 8 ; VDD = 3.6 V  
RL = 8 ; VDD = 5.0 V  
RL = 4 ; VDD = 5.0 V  
VDD = 5.0 V; Gv(cl) = 6 dB; f = 1 kHz  
Po = 0.5 W  
-
-
-
0.72  
1.4  
-
-
-
W
W
W
2.1  
THD+N  
SVRR  
total harmonic  
distortion-plus-noise  
-
-
0.11  
0.14  
-
-
%
%
Po = 1.0 W  
supply voltage ripple  
rejection  
Gv(cl) = 6 dB; f = 217 Hz  
VDD = 3.6 V  
-
-
-
73  
77  
69  
-
-
-
dB  
dB  
dB  
VDD = 5.0 V  
CMRR  
Zi  
common mode rejection VDD = 5.0 V; Gv(cl) = 6 dB; f = 217 Hz  
ratio  
input impedance  
Gv(cl) = 6 dB  
Gv(cl) = 12 dB  
Gv(cl) = 18 dB  
Gv(cl) = 24 dB  
VDD = 3.6 V  
-
-
-
-
-
28.1  
17.3  
9.8  
-
-
-
-
-
kΩ  
kΩ  
kΩ  
kΩ  
ms  
5.2  
td(sd-startup)  
Vn(o)  
delay time from  
shutdown to start-up  
3.5  
output noise voltage  
VDD = 3.6 V; f = 20 Hz to 20 kHz;  
inputs are AC grounded  
no weighting  
A weighting  
-
-
35  
27  
-
-
µV  
µV  
[1] VDD is the supply voltage on pins PVDD and pin AVDD.  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
6 of 24  
 
   
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
10. Typical performance curves  
001aah484  
2
10  
THD+N  
(%)  
10  
1
(1)  
(2) (3)  
1  
10  
2  
10  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
P
(W)  
o
a. Gv(cl) = 24 dB  
001aah485  
2
10  
THD+N  
(%)  
10  
1
(1)  
(2) (3)  
1  
10  
2  
10  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
P
(W)  
o
b. Gv(cl) = 6 dB.  
fi = 1 kHz.  
(1) VDD = 2.5 V.  
(2) VDD = 3.6 V.  
(3) VDD = 5.0 V.  
Fig 3. Total harmonic distortion-plus-noise as a function of output power; RL = 8 Ω  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
7 of 24  
 
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
001aah486  
2
10  
THD+N  
(%)  
10  
1
(1)  
(2) (3)  
1  
10  
2  
10  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
P
(W)  
o
a. Gv(cl) = 24 dB.  
001aah487  
2
10  
THD+N  
(%)  
(1)  
(2) (3)  
10  
1
1  
10  
2  
10  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
P
(W)  
o
b. Gv(cl) = 6 dB.  
fi = 1 kHz.  
(1) VDD = 2.5 V.  
(2) VDD = 3.6 V.  
(3) VDD = 5.0 V.  
Fig 4. Total harmonic distortion-plus-noise as a function of output power; RL = 4 Ω  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
8 of 24  
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
001aah488  
1
THD+N  
(%)  
1  
(1)  
(2)  
10  
(3)  
2  
10  
3  
10  
2
3
4
5
10  
10  
10  
10  
10  
f (Hz)  
(1) Po = 350 mW; Vi = 590 mV (RMS).  
(2) Po = 240 mW; Vi = 490 mV (RMS).  
(3) Po = 120 mW; Vi = 346 mV (RMS).  
a. RL = 4 Ω  
001aah489  
1
THD+N  
(%)  
(1)  
(2)  
1  
10  
(3)  
2  
10  
3  
10  
2
3
4
5
10  
10  
10  
10  
10  
f (Hz)  
(1) Po = 260 mW; Vi = 721.1 mV (RMS).  
(2) Po = 180 mW; Vi = 600 mV (RMS).  
(3) Po = 90 mW; Vi = 424.3 mV (RMS).  
b. RL = 8 Ω  
Gv(cl) = 6 dB.  
Fig 5. Total harmonic distortion-plus-noise as a function of frequency; VDD = 2.5 V  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
9 of 24  
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
001aah490  
1
THD+N  
(%)  
(1)  
1  
10  
(3)  
(2)  
2  
10  
3  
10  
2
3
4
5
10  
10  
10  
10  
10  
f (Hz)  
(1) Po = 825 mW; Vi = 908.3 mV (RMS).  
(2) Po = 550 mW; Vi = 741.6 mV (RMS).  
(3) Po = 275 mW; Vi = 524.4 mV (RMS).  
a. RL = 4 Ω  
001aah491  
1
THD+N  
(%)  
(1)  
1  
10  
(2)  
(3)  
2  
10  
3  
10  
2
3
4
5
10  
10  
10  
10  
10  
f (Hz)  
(1) Po = 560 mW; Vi = 1.058 V (RMS).  
(2) Po = 375 mW; Vi = 866 mV (RMS).  
(3) Po = 190 mW; Vi = 616.4 mV (RMS).  
b. RL = 8 Ω  
Gv(cl) = 6 dB.  
Fig 6. Total harmonic distortion-plus-noise as a function of frequency; VDD = 3.6 V  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
10 of 24  
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
001aah492  
1
THD+N  
(%)  
1  
10  
(1)  
2  
(2)  
(3)  
10  
3  
10  
2
3
4
5
10  
10  
10  
10  
10  
f (Hz)  
(1) Po = 1.65 W; Vi = 1.285 V (RMS).  
(2) Po = 1.1 W; Vi = 1.05 V (RMS).  
(3) Po = 550 mW; Vi = 741.6 mV (RMS).  
a. RL = 4 Ω  
001aah493  
10  
THD+N  
(%)  
(1)  
1
1  
10  
(2)  
(3)  
2  
10  
3  
10  
2
3
4
5
10  
10  
10  
10  
10  
f (Hz)  
(1) Po = 1.16 W; Vi = 1.523 V (RMS).  
(2) Po = 775 mW; Vi = 1.245 V (RMS).  
(3) Po = 380 mW; Vi = 871.8 mV (RMS).  
b. RL = 8 Ω  
Gv(cl) = 6 dB.  
Fig 7. Total harmonic distortion-plus-noise as a function of frequency; VDD = 5.0 V  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
11 of 24  
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
001aah495  
60  
α
ct  
(dB)  
80  
(1)  
(2)  
100  
(3)  
(4)  
120  
3
4
5
10  
10  
10  
f (Hz)  
(1) VDD = 3.6 V; L channel to R channel.  
(2) VDD = 3.6 V; R channel to L channel.  
(3) VDD = 5.0 V; L channel to R channel.  
(4) VDD = 5.0 V; R channel to L channel.  
Fig 8. Crosstalk (stepped all-to-one) as a function of frequency  
001aah497  
3  
10  
V
n(o)  
(V)  
4  
10  
10  
10  
(1)  
(2)  
5  
6  
2
3
4
10  
10  
10  
10  
f (Hz)  
(1) Left channel.  
(2) Right channel.  
Fig 9. Noise output voltage (RMS value) as a function of frequency  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
12 of 24  
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
001aah505  
60  
α
ct  
(dB)  
80  
(1)  
(2)  
(3)  
100  
120  
2
4
6
8
10  
12  
14  
16  
18  
20  
f (kHz)  
a. RL = 4 Ω  
001aah506  
60  
α
ct  
(dB)  
80  
(1)  
(2)  
100  
(3)  
120  
2
4
6
8
10  
12  
14  
16  
18  
20  
f (kHz)  
b. RL = 8 Ω  
(1) VDD = 2.5 V.  
(2) VDD = 3.6 V.  
(3) VDD = 5.0 V.  
Fig 10. Crosstalk (one-to-one) as a function of frequency  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
13 of 24  
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
001aah507  
5 V  
001aah508  
6
5.5  
(1)  
(2)  
V
(V)  
I
DD  
(mA)  
DD  
(3)  
4
2
0
4.5  
3.6 V  
2.5 V  
3.5  
2.5  
0
1
2
3
2.5  
3.5  
4.5  
5.5  
V
V
(V)  
V
(V)  
DD  
SDR; SDL  
(1) left channel; RL = 8 .  
(2) right channel; RL = 4 .  
(3) right channel; RL = 8 .  
Fig 11. Supply voltage as a function of shutdown  
voltage  
Fig 12. Supply current as a function of supply voltage  
001aah509  
001aah510  
1600  
800  
I
I
DD  
DD  
(mA)  
(mA)  
1200  
600  
800  
400  
0
400  
200  
0
(1)  
(2)  
(3)  
(1)  
(2)  
(3)  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
0.4  
0.8  
1.2  
1.6  
P
(W)  
P
(W)  
o
o
a. RL = 4 Ω  
b. RL = 8 Ω  
(1) VDD = 2.5 V.  
(2) VDD = 3.6 V.  
(3) VDD = 5.0 V.  
Fig 13. Supply current as a function of output power  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
14 of 24  
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
001aah511  
(1)  
001aah512  
(1)  
0.8  
0.4  
P
(W)  
P
(W)  
0.6  
0.4  
0.3  
(2)  
0.2  
0.1  
0
(2)  
(3)  
0.2  
(3)  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
0.4  
0.8  
1.2  
1.6  
P
(W)  
P
(W)  
o
o
a. RL = 4 Ω  
b. RL = 8 Ω  
(1) VDD = 5.0 V.  
(2) VDD = 3.6 V.  
(3) VDD = 2.5 V.  
Fig 14. Power dissipation as a function of output power  
001aah514  
(1)  
001aah513  
100  
100  
η
η
po  
po  
80  
80  
60  
40  
20  
0
(3)  
(1)  
(2)  
(2)  
(3)  
60  
40  
20  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
0.4  
0.8  
1.2  
1.6  
P
(W)  
P
(W)  
o
o
a. RL = 4 Ω  
b. RL = 8 Ω  
(1) VDD = 5.0 V.  
(2) VDD = 3.6 V.  
(3) VDD = 2.5 V.  
Fig 15. Output power efficiency as a function of output power  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
15 of 24  
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
11. Application information  
differential inputs  
left channel  
differential inputs  
right channel  
1 µF  
1 µF  
1 µF  
1 µF  
V
V
DD  
DD  
INLP INLN AGND  
INRN INRP  
G1  
G0  
FB  
FB  
FB  
FB  
OUTLP  
OUTLN  
OUTRP  
1 nF  
1 nF  
1 nF  
1 nF  
SA58670A  
OUTRN  
V
V
DD  
PVDD  
PGND  
PVDD  
PGND  
DD  
10 µF  
1 µF  
10 µF  
1 µF  
SDL  
SDR AVDD  
V
DD  
10 µF  
1 µF  
002aad665  
Fig 16. SA58670A application schematic  
11.1 Power supply decoupling considerations  
The SA58670A is a stereo class-D audio amplifier that requires proper supply voltage  
decoupling to ensure the rated performance for THD+N and power efficiency. To decouple  
high frequency transients, supply voltage spikes and digital noise on the supply voltage  
bus line, a low Equivalent Series Resistance (ESR) capacitor of typically 1 µF is placed as  
close as possible to the PVDD pins of the SA58670A. It is important to place the  
decoupling capacitor at the supply voltage pins of the SA58670A because any resistance  
or inductance in the PCB trace between the SA58670A and the capacitor can cause a  
loss in efficiency. Additional decoupling using a larger capacitor, 4.7 µF or greater, may be  
done on the supply voltage connection on the PCB to filter low frequency signals. Usually  
this is not required due to high PSRR of the SA58670A.  
11.2 Input capacitor selection  
The SA58670A does not require input coupling capacitors when used with a differential  
audio source that is biased from 0.5 V to VDD 0.8 V. In other words, the input signal must  
be biased within the common-mode input voltage (Vi(cm)) range. If high-pass filtering is  
required or if it is driven using a single-ended source, input coupling capacitors are  
required.  
The 3 dB cut-off frequency created by the input coupling capacitor and the input resistors  
(see Table 6) is calculated by Equation 1:  
1
f 3dB  
=
(1)  
-----------------------------  
2π × Ri × Ci  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
16 of 24  
 
       
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
Table 6.  
Gain selection  
G1  
G0  
Gain (V/V)  
Gain (dB)  
Input impedance (k)  
LOW  
LOW  
HIGH  
HIGH  
LOW  
HIGH  
LOW  
HIGH  
2
6
28.1  
17.3  
9.8  
4
12  
18  
24  
8
16  
5.2  
Since the value of the input decoupling capacitor and the input resistance determined by  
the gain setting affects the low frequency performance of the audio amplifier, it is  
important to consider this during the system design. Small speakers in wireless and  
cellular phones usually do not respond well to low frequency signals, so the 3 dB cut-off  
frequency may be increased to block the low frequency signals to the speakers. Not using  
input coupling capacitors may increase the output offset voltage.  
Equation 2 is solved for Ci:  
1
Ci =  
(2)  
-------------------------------------  
2π × Ri × f 3dB  
11.3 PCB layout considerations  
Component location is very important for performance of the SA58670A. Place all  
external components very close to the SA58670A. Placing decoupling capacitors directly  
at the power supply voltage pins increases efficiency because the resistance and  
inductance in the trace between the SA58670A power supply voltage pins and the  
decoupling capacitor causes a loss in power efficiency.  
The trace width and routing are also very important for power output and noise  
considerations.  
For high current pins (PVDD, PGND and audio output), the trace widths should be  
maximized to ensure proper performance and output power. Use at least 500 µm wide  
traces.  
For the input pins (INRP, INRN, INLP and INLN), the traces must be symmetrical and run  
side-by-side to maximize common-mode cancellation.  
11.4 Filter-free operation and ferrite bead filters  
A ferrite bead low-pass filter can be used to reduce radio frequency emissions in  
applications that have circuits sensitive to frequencies greater than 1 MHz. A ferrite bead  
low-pass filter functions well for amplifiers that must pass FCC unintentional radiation  
requirements for frequencies greater than 30 MHz. Choose a bead with high-impedance  
at high frequencies and very low-impedance at low frequencies. In order to prevent  
distortion of the output signal, select a ferrite bead with adequate current rating.  
For applications in which there are circuits that are EMI sensitive to low frequencies  
(< 1 MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC  
output filter.  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
17 of 24  
 
       
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
11.5 Efficiency and thermal considerations  
The maximum ambient operating temperature depends on the heat transferring ability of  
the heat spreader on the PCB layout. In Table 3 “Limiting values”, the power derating  
factor is given as 41.6 mW/K. The device thermal resistance, Rth(j-a) is the reciprocal of the  
power derating factor. Convert the power derating factor to Rth(j-a) by Equation 3:  
1
1
Rth( j-a)  
=
=
= 24 K/W  
(3)  
-----------------------------------------  
derating factor  
---------------  
0.0416  
For a maximum allowable junction temperature Tj = 150 °C and Rth(j-a) = 24 K/W and a  
maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel  
output power, 4 load, 5 V supply, the maximum ambient temperature is calculated using  
Tamb(max) = T j(max) (Rth( j-a) × Pmax) = 150 (24 × 1.5) = 114 °C  
(4)  
The maximum ambient temperature is 114 °C at maximum power dissipation for 5 V  
supply and 4 load. If the junction temperature of the SA58670A rises above 150 °C, the  
thermal protection circuitry turns the SA58670A off; this prevents damage to IC. Using  
speakers greater than 4 further enhances thermal performance and battery lifetime by  
reducing the output load current and increasing amplifier efficiency.  
11.6 Additional thermal information  
The SA58670A HVQFN20 package incorporates an exposed DAP that is designed to  
solder the mount directly to the PCB heat spreader. By the use of thermal vias, the DAP  
may be soldered directly to a ground plane or special heat sinking layer designed into the  
PCB. The thickness and area of the heat spreader may be maximized to optimize heat  
transfer and achieve lowest package thermal resistance.  
12. Test information  
15 µH  
INxP  
INxN  
OUTxP  
DUT  
AP585  
AUDIO  
ANALYZER  
AUX0025  
30 kHz  
LOW-PASS FILTER  
R
L
OUTxN  
15 µH  
+
AP585  
MEASUREMENT  
INPUTS  
POWER  
SUPPLY  
002aad417  
Fig 17. Test circuit  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
18 of 24  
 
         
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
13. Package outline  
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;  
20 terminals; body 4 x 4 x 0.85 mm  
SOT917-1  
B
A
E
D
terminal 1  
index area  
A
A
1
c
detail X  
C
e
1
y
y
v
M
M
C
C
A
B
C
1
e
b
w
6
10  
L
11  
15  
5
1
e
e
E
2
h
terminal 1  
index area  
20  
16  
D
h
X
0
2.5  
scale  
5 mm  
DIMENSIONS (mm are the original dimensions)  
(1)  
A
max.  
(1)  
(1)  
UNIT  
A
b
c
E
h
e
e
1
e
2
y
D
D
E
L
v
w
y
1
h
1
0.05 0.30  
0.00 0.18  
4.1  
3.9  
2.45 4.1  
2.15 3.9  
2.45  
2.15  
0.6  
0.4  
mm  
0.05  
0.1  
1
0.2  
0.5  
2
2
0.1  
0.05  
Note  
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
05-10-08  
05-10-31  
SOT917 -1  
- - -  
MO-220  
- - -  
Fig 18. Package outline SOT917-1 (HVQFN20)  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
19 of 24  
 
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
14. Soldering of SMD packages  
This text provides a very brief insight into a complex technology. A more in-depth account  
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow  
soldering description”.  
14.1 Introduction to soldering  
Soldering is one of the most common methods through which packages are attached to  
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both  
the mechanical and the electrical connection. There is no single soldering method that is  
ideal for all IC packages. Wave soldering is often preferred when through-hole and  
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not  
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high  
densities that come with increased miniaturization.  
14.2 Wave and reflow soldering  
Wave soldering is a joining technology in which the joints are made by solder coming from  
a standing wave of liquid solder. The wave soldering process is suitable for the following:  
Through-hole components  
Leaded or leadless SMDs, which are glued to the surface of the printed circuit board  
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless  
packages which have solder lands underneath the body, cannot be wave soldered. Also,  
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,  
due to an increased probability of bridging.  
The reflow soldering process involves applying solder paste to a board, followed by  
component placement and exposure to a temperature profile. Leaded packages,  
packages with solder balls, and leadless packages are all reflow solderable.  
Key characteristics in both wave and reflow soldering are:  
Board specifications, including the board finish, solder masks and vias  
Package footprints, including solder thieves and orientation  
The moisture sensitivity level of the packages  
Package placement  
Inspection and repair  
Lead-free soldering versus SnPb soldering  
14.3 Wave soldering  
Key characteristics in wave soldering are:  
Process issues, such as application of adhesive and flux, clinching of leads, board  
transport, the solder wave parameters, and the time during which components are  
exposed to the wave  
Solder bath specifications, including temperature and impurities  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
20 of 24  
 
       
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
14.4 Reflow soldering  
Key characteristics in reflow soldering are:  
Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to  
higher minimum peak temperatures (see Figure 19) than a SnPb process, thus  
reducing the process window  
Solder paste printing issues including smearing, release, and adjusting the process  
window for a mix of large and small components on one board  
Reflow temperature profile; this profile includes preheat, reflow (in which the board is  
heated to the peak temperature) and cooling down. It is imperative that the peak  
temperature is high enough for the solder to make reliable solder joints (a solder paste  
characteristic). In addition, the peak temperature must be low enough that the  
packages and/or boards are not damaged. The peak temperature of the package  
depends on package thickness and volume and is classified in accordance with  
Table 7 and 8  
Table 7.  
SnPb eutectic process (from J-STD-020C)  
Package thickness (mm) Package reflow temperature (°C)  
Volume (mm3)  
< 350  
350  
220  
< 2.5  
235  
220  
2.5  
220  
Table 8.  
Lead-free process (from J-STD-020C)  
Package thickness (mm) Package reflow temperature (°C)  
Volume (mm3)  
< 350  
260  
350 to 2000  
> 2000  
260  
< 1.6  
260  
250  
245  
1.6 to 2.5  
> 2.5  
260  
245  
250  
245  
Moisture sensitivity precautions, as indicated on the packing, must be respected at all  
times.  
Studies have shown that small packages reach higher temperatures during reflow  
soldering, see Figure 19.  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
21 of 24  
 
 
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
maximum peak temperature  
= MSL limit, damage level  
temperature  
minimum peak temperature  
= minimum soldering temperature  
peak  
temperature  
time  
001aac844  
MSL: Moisture Sensitivity Level  
Fig 19. Temperature profiles for large and small components  
For further information on temperature profiles, refer to Application Note AN10365  
“Surface mount reflow soldering description”.  
15. Abbreviations  
Table 9.  
Abbreviations  
Description  
Acronym  
DAP  
DVD  
EMI  
Die Attach Paddle  
Digital Video Disc  
ElectroMagnetic Interference  
Equivalent Series Resistance  
inductor-capacitor filter  
Personal Computer  
ESR  
LC  
PC  
PCB  
PDA  
PWM  
USB  
Printed-Circuit Board  
Personal Digital Assistant  
Pulse Width Modulator  
Universal Serial Bus  
16. Revision history  
Table 10. Revision history  
Document ID  
SA58670A_2  
Modifications:  
Release date  
Data sheet status  
Change notice  
Supersedes  
20081023  
Product data sheet  
-
SA58670A_1  
added IDD(sd) specification  
20080220 Product data sheet  
SA58670A_1  
-
-
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
22 of 24  
 
   
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
17. Legal information  
17.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
17.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
17.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
17.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
18. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: [email protected]  
SA58670A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 23 October 2008  
23 of 24  
 
           
SA58670A  
NXP Semiconductors  
2.1 W/channel stereo class-D audio amplifier  
19. Contents  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For sales office addresses, please send an email to: [email protected]  
Date of release: 23 October 2008  
Document identifier: SA58670A_2  
 
 

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